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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
PRF957 UHF wideband transistor
Product specification Supersedes data of 1999 Mar 01 1999 Jul 23
Philips Semiconductors
Product specification
UHF wideband transistor
FEATURES * Small size * Low noise * Low distortion * High gain * Gold metallization ensures excellent reliability. APPLICATIONS * Communication and instrumentation systems. DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT323 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners.
1 Top view Marking code: W2. 2
MAM062
PRF957
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
handbook, halfpage
3
3 1 2
Fig.1 Simplified outline (SOT323) and symbol.
QUICK REFERENCE DATA SYMBOL Cre fT GUM NF Ptot Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER feedback capacitance transition frequency maximum unilateral power gain noise figure total power dissipation thermal resistance from junction to soldering point CONDITIONS IC = 0; VCB = 6 V; f = 1 MHz IC = 30 mA; VCE = 6 V; fm = 1 GHz IC = 30 mA; VCE = 6 V; Tamb = 25 C; f = 1 GHz S = opt; IC = 5 mA; VCE = 6 V; f = 1 GHz Ts = 60 C; note 1 Ptot = 270 mW MIN. - - - - - - TYP. 0.4 8.5 15 1.3 - - MAX. - - - - 270 425 UNIT pF GHz dB dB mW K/W
1999 Jul 23
2
Philips Semiconductors
Product specification
UHF wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 134. SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point CONDITIONS Ptot = 270 mW; Ts = 60 C; note 1 VALUE 425 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current average collector current total power dissipation storage temperature junction temperature Ts = 60 C; note 1 open emitter open base open collector CONDITIONS MIN. - - - - - - -65 -
PRF957
MAX. 20 10 1.5 100 100 270 +150 175
UNIT V V V mA mA mW C C
UNIT K/W
1999 Jul 23
3
Philips Semiconductors
Product specification
UHF wideband transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL DC characteristics V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current emitter-base leakage current DC current gain IC = 100 A; IE = 0 IC = 100 A; IB = 0 IE = 10 A; IC = 0 VCB = 10 V; IE = 0 VEB = 1 V; IC = 0 IC = 5 mA; VCE = 6 V IC = 15 mA; VCE = 6 V AC characteristics Cre fT |s21|2 GUM feedback capacitance transition frequency insertion gain maximum unilateral power gain; note 1 IC = 0; VCB = 6 V; f = 1 MHz IC = 30 mA; VCE = 6 V; fm = 1 GHz IC = 30 mA; VCE = 6 V; f = 1 GHz IC = 30 mA; VCE = 6 V; Tamb = 25 C; f = 1 GHz IC = 30 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz NF noise figure S = opt; IC = 5 mA; VCE = 6 V; f = 1 GHz S = opt; IC = 5 mA; VCE = 6 V; f = 2 GHz Note - - - - - - - 0.4 8.5 14 15 9.2 1.3 1.8 20 10 1.5 - - 50 - - - - - - 100 100 PARAMETER CONDITIONS MIN. TYP.
PRF957
MAX. - - - 100 100 200 - - - - - - - -
UNIT
V V V nA nA
pF GHz dB dB dB dB dB
s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -------------------------------------------------------- dB ( 1 - s 11 2 ) ( 1 - s 22 2 )
1999 Jul 23
4
Philips Semiconductors
Product specification
UHF wideband transistor
PRF957
MGS512
handbook, halfpage
400
handbook, halfpage
120
MGS513
Ptot (mW) 300
hFE
80
200
40 100
0 0 50 100 150 Ts (C) 200
0 0 10 20 30 40 50 IC (mA)
VCE = 6 V.
Fig.2 Power derating as a function of soldering point temperature.
Fig.3
DC current gain as a function of collector current; typical values.
handbook, halfpage
0.8
MGS514
MGS515
handbook, halfpage
10
Cre (pF) 0.6
fT (GHz)
8
6 0.4 4 0.2 2
0 0 4 8 VCB (V) 12
0 0 10 20 30 I C (mA) 40
IC = 0; f = 1 MHz.
VCE = 6 V; fm = 1 GHz; Tamb = 25 C.
Fig.4
Feedback capacitance as a function of collector-base voltage; typical values.
Fig.5
Transition frequency as a function of collector current; typical values.
1999 Jul 23
5
Philips Semiconductors
Product specification
UHF wideband transistor
PRF957
MGS516
handbook, halfpage
20
handbook, halfpage
50
MGS517
gain (dB) 16
MSG
G max G UM
gain (dB) 40 GUM 30 MSG
12
8
20
4
10
Gmax
0 0 10 20 30 I C (mA) 40
0 102
103
f (MHz)
104
f = 1 GHz; VCE = 6 V.
IC = 5 mA; VCE = 6 V.
Fig.6
Gain as a function of collector current; typical values.
Fig.7
Gain as a function of frequency; typical values.
handbook, halfpage
50
MGS518
handbook, halfpage
50
MGS519
gain (dB) 40
gain (dB) 40
30
30 MSG MSG
20 GUM Gmax 10
20 GUM Gmax 10
0 102
103
f (MHz)
104
0 102
103
f (MHz)
104
IC = 15 mA; VCE = 6 V.
IC = 30 mA; VCE = 6 V.
Fig.8
Gain as a function of frequency; typical values.
Fig.9
Gain as a function of frequency; typical values.
1999 Jul 23
6
Philips Semiconductors
Product specification
UHF wideband transistor
PRF957
handbook, halfpage
4
MGS520
handbook, halfpage
4
MGS521
NF (dB) 3
(1)
NF (dB) 3
(1)
2
(2) (3) (4) (5)
2
(2) (3)
1
(6)
1
0 10-1 VCE = 6 V. (1) f = 2 GHz (2) f = 1.5 GHz (3) f = 1 GHz
1
10
IC (mA)
102
0 102 VCE = 6 V. (1) IC = 30 mA (2) IC = 15 mA (3) IC = 5 mA.
103
f (MHz)
104
(4) f = 900 MHz (5) f = 800 MHz (6) f = 500 MHz.
Fig.10 Minimum noise figure as a function of collector current; typical values.
Fig.11 Minimum noise figure as a function of frequency; typical values.
1999 Jul 23
7
Philips Semiconductors
Product specification
UHF wideband transistor
PRF957
handbook, full pagewidth
unstable region source
90 +1
unstable region load 1.0 45 0.8 0.6 0.4 0.2 2
(5) (6)
135
+0.5
+2
+0.2
(1)
opt
(4)
+5
180
0
0.2
(2)
0.5
1
5
0
0
(3)
-0.2 f = 1 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 . (1) G = 16 dB (2) G = 15 dB (3) G = 14 dB (4) NF = 1.3 dB (5) NF = 1.5 dB (6) NF = 1.7 dB.
-5
-135
-0.5 -1
-2
- 45 1.0
- 90
MGS522
Fig.12 Common emitter available gain, noise and stability circles; typical values.
handbook, full pagewidth
90 unstable region source 135 +0.5 +1 +2
unstable region load
1.0 0.8 0.6 0.4 0.2
45
+0.2
+5
180
0
(1)
0.2
0.5 opt
(5) (6)
1
(7)
2
5
0
0
f = 2 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 . (1) Gmax = 9.95 dB (2) G = 9 dB (3) G = 8 dB (4) G = 7 dB (5) NF = 1.8 dB (6) NF = 2 dB (7) NF = 2.2 dB.
-0.2
(2) (3) (4)
-5
-135
-0.5
-2 -1
- 45 1.0
- 90
MGS523
Fig.13 Common emitter available gain, noise and stability circles; typical values.
1999 Jul 23
8
Philips Semiconductors
Product specification
UHF wideband transistor
APPLICATION INFORMATION SPICE parameters for the PRF957 die SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) 36(1) 37(1) PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VJS MJS VALUE 0.963 102.3 1.002 64.75 841.1 35.77 2.138 90.16 1.000 3.198 25.77 156.6 1.047 6.071 0.000 2.478 0.164 1.315 0.000 1.110 3.000 1.161 600.0 0.394 3.073 10.25 4.599 53.49 0.000 409.9 287.1 0.111 0.104 0.000 0.000 700.0 0.000 - - V mA fA - - - V mA aA - A - eV - pF mV - ps - V mA deg fF mV - - ps F mV - Cbe Ccb Cce L1 L2 L3 LB LE List of components (see Fig.14) DESIGNATION 2 100 100 0.34 0.10 0.34 0.60 0.60 VALUE
QLB = 50; QLE = 50; QLB(f) = QLB(f/fc); QLE(f) = QLE(f/fc); fc = corner frequency = 1 GHz.
E L3 B L1 LB B' E' LE C'
handbook, halfpage
PRF957
SEQUENCE No. 38 UNIT fA 39(2) 40(2) Notes
PARAMETER FC Cbpb Cbpe
VALUE 0.888 73.00 131.00 -
UNIT fF fF
1. These parameters have not been extracted, the default values are shown. 2. Cbpb, Cbpe: base-bondpad and emitter-bondpad capacitance to collector.
C cb
L2 C
C be
Cce
MBC964
Fig.14 Package equivalent circuit SOT323.
UNIT fF fF fF nH nH nH nH nH
1999 Jul 23
9
Philips Semiconductors
Product specification
UHF wideband transistor
PRF957
handbook, full pagewidth
90 +1 135 +0.5 +2 45 1.0 0.8 0.6 0.4 0.2 180 0 0.2 0.5 2 GHz 1 1 GHz 500 MHz -0.2 200 MHz 100 MHz -5 2 5 0 0
+0.2 3 GHz
+5
-0.5 -135 -1
-2
- 45 1.0
- 90 VCE = 6 V; IC = 30 mA; Zo = 50 .
MGS524
Fig.15 Common emitter input reflection coefficient (s11); typical values.
handbook, full pagewidth
90
135
45
200 MHz 100 MHz 500 MHz 1 GHz 2 GHz 3 GHz
180
50
40
30
20
10
0
-135
- 45
- 90 VCE = 6 V; IC = 30 mA.
MGS525
Fig.16 Common emitter forward transmission coefficient (s21); typical values.
1999 Jul 23
10
Philips Semiconductors
Product specification
UHF wideband transistor
PRF957
handbook, full pagewidth
90
135 3 GHz
45
2 GHz 1 GHz 180 0.5 0.4 0.3 0.2 0.1 500 MHz 200 MHz 100 MHz 0
-135
- 45
- 90 VCE = 6 V; IC = 30 mA.
MGS526
Fig.17 Common emitter reverse transmission coefficient (s12); typical values.
handbook, full pagewidth
90 +1 135 +0.5 +2 45 1.0 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 0 0
+0.2
+5
2 GHz 1 GHz 500 MHz -0.2 3 GHz 100 MHz -5 200 MHz
-135
-0.5 -1
-2
- 45 1.0
- 90 VCE = 6 V; IC = 30 mA; Zo = 50 .
MGS527
Fig.18 Common emitter output reflection coefficient (s22); typical values.
1999 Jul 23
11
Philips Semiconductors
Product specification
UHF wideband transistor
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
PRF957
SOT323
D
B
E
A
X
y
HE
vMA
3
Q
A
A1 c
1
e1 e bp
2
wM B Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2
OUTLINE VERSION SOT323
REFERENCES IEC JEDEC EIAJ SC-70
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Jul 23
12
Philips Semiconductors
Product specification
UHF wideband transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
PRF957
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Jul 23
13
Philips Semiconductors
Product specification
UHF wideband transistor
NOTES
PRF957
1999 Jul 23
14
Philips Semiconductors
Product specification
UHF wideband transistor
NOTES
PRF957
1999 Jul 23
15
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 67
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125006/03/pp16
Date of release: 1999
Jul 23
Document order number:
9397 750 06132

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